|
|
|
|
|
|
|
|
|
|
MX
102-12 |
|
|
300
mm Wafer Thickness and Flatness Gauge |
|
|
|
|
|
|
|
|
|
|
|
|
|
Abstract |
|
|
|
|
|
Based
on a turntable used with 4" to 8" wafers, the MX 102-12 yields
four radial profiles, each consisting of 300 thickness values. The number
of profiles can be increased to cover the entire area of the wafer. The
gauge uses one pair of capacitive sensors having a resolution of 10 nanometers.
Within a few seconds, it can be adapted to different thickness ranges. Before
every scan, the gauge recalibrates itself automatically by means of a certified
gauge block. |
|
|
|
|
|
|
|
|
|
|
|
Extended
Range Mode |
|
|
|
|
|
The
MX 102-12 was originally designed for thickness measurements after the grinding
or lapping stages. In these cases, the TTV of the wafers is small, and the
resolution the instrument is supposed to have is high. There are other process
stages, however, especially after cutting or after backside grinding, where
a higher thickness range is more important than a resolution of some nanometers.
In the PC controlled setup, the measuring range of the instrument can be
set to normal or extended. |
|
|
|
|
|
|
|
|
|
|
|
SCAN8XN |
|
|
|
|
|
The standard four radial scans are
sufficient for many applications. Theoretically, it might be possible to
increase the number of scans so that almost 50 percent of the wafer area
could be covered. The remaining area, however, lies in the 'shadow' of the
four wafer supports. A simple additional movement solves this problem. After
the first part of the measurement cycle, the wafer is raised and held by
two pneumatic stamps while the turntable beneath the wafer performs a rotational
movement of 45 degrees. After the wafer is lowered back to the supports
and reclamped by the vacuum chuck, the second part of the measurement cycle
may begin, which will cover the remaining part of the wafer area. This,
of course, increases the measuring time correspondingly. |
|
|
|
 |
|
|
|
|
|
|
|
|
|
|
|
|
|
The additionally offered measuring program SCAN8XN
provides a compromise between resolution and throughput: the second scan
cycle has an offset of 22.5 degrees, yielding eight cross scans with a total
number of about 2300 measuring points. A simple three-dimensional graphic
representation gives a global impression of the wafer's shape. |
|
|
 |
 |
|
|
|
|
|
|
|
|
|
|
|
Back |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|