PBS® and EPBS™ measurements with the PBS-1000 Fast-Mapper System

Non-destructive low level backscatter measurements for detection of nanometer size microdefects below the polished wafer surface.

• Qualification of polished and epitaxial substrate wafers
  
• Polishing and ion implant damage easily quantified
  
• 100mm - 300mm unpatterned wafers
  
• 0.001 ppm/Sr scattered light detection level
  
• 3µm detection depth in Silicon and 0.4µm in GaAs
  
• High resolution mapping of defect levels and distribution in epitaxial layers with >450,000 points with 2 measurements per point for Surface and Subsurface EPBS™.

Technical Papers:
CMP Measurements
Analysis of SOI Wafers